Applications
- Super high resolution HAADF/LAADF/ABF/BF-STEM imaging
- High resolution iDPC imaging for light elements
- DPC and Lorentz microscopy for magnetic and polarized materials
- Fast EDS elemental mapping with Dual-X
- Fast EELS mapping and EFTEM with Gatan K3 direct detection camera
- High energy resolution monochromated EELS
- 4D-STEM for strain/phase/orientation/field mapping, DPC, and ptychography
Contact
Location
Microscope Room: G032; Control Room: G030
Acknowledgments
Publications, presentations, and posters resulting from work on this instrument should state: “The authors acknowledge the financial support of the University of Michigan College of Engineering and technical support from the Michigan Center for Materials Characterization.”
Specifications
- Accelerating Voltage
- 30, 60, and 300kV
- Electron Source
- X-FEG high-brightness Schottky type field emission gun
- Illumination system
- Three-lens condenser system with adjustable convergence angles
- ConstantPowerTM design allowing for fast switching of modes, magnification, conditions, and techniques, with minimized stabilization time
- Monochromator
- In-column Wien-fielter type monochromator enabling high-resolution EELS with < 0.2 eV energy resolution at 300 kV and ≤ 25 meV at 30 kV with UltiMono
- OptiMono+ software package providing automated monochromator tuning
- Aberration corrector
- Cs S-CORR Probe Corrector optimizes higher order aberrations up to 5th order (C5 & A5), allowing for improved spatial resolution at low kV
- Image Acquisition & Analysis System
- Ceta-S bottom mount CMOS camera with up to 4k × 4k resolution
- Ceta speed enhancement (40 fps at 4k × 4k and 300 fps at 512 × 512)
- Simultaneous STEM HAADF/DF-S/DF-O/DF-I/BF-S acquisition with Panther STEM detection system
- Segmented detector for DPC imaging with live iDPC and dDPC
- EMPAD for 4D-STEM with a speed up to 1100 fps
- Resolution
- CTEM point resolution 0.21 nm; information limit <0.10 nm (300 kV)
- STEM ≤ 0.06 nm at 300 kV; ≤ 0.111 nm at 60 kV; ≤ 0.136 nm at 30 kV
- EDS
- Dual-X window-less detector consists of 2 × 100 mm2 racetrack SDDs with a solid angle of 1.8 srad, detecting all elements down to and including boron
- EELS System
- Gatan Continuum K3 HR/1069HR (300 kV) with FXUP (30 & 60 kV) post-column energy filter with ultra-fast electrostatic shutter, high-speed DualEELS, and BF/DF detector
- Lorentz microscopy
- Built-in Lorentz lens in the lower pole piece of the objective lens enables to image magnetic structures
- In-situ observation under controllable magnetic field along the optical axis
- Precession Diffraction
- Beam precession up to 3° with real-time descan below the specimen for acquiring electron diffraction patterns in TEM mode with minimized dynamical diffraction effect
- Compatible sample holders
- CompuStage single-tilt (x = ±35°) holder
- High-visibility low-background double-tilt (x = ±35°, y = ±30°) holder for optimized EDS acquisition
- Fischione Tomography holder Model 2020 with high-tilt angles (x = ±70°)
- Gatan Elsa cryo-transfer holder allows >9 h below -145 °C and >8 h of stable, high-resolution imaging with high-tilt capability (x = ±70°)
- Protochips Fusion Select double-tilt (x = ±30°, y = ±18°) MEMS-based heating and biasing holder
- Other Accessories
- Velox software for TEM/STEM/DPC imaging with simultaneous EDS and EELS acquisition
- OptiSTEM+ for automated, reliable, fast, and robust correction of first and second order aberrations (C1/A1/A2/B2) on real samples
- TEM scripting for controlling the microscopy by a user application
References
-
Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures, D. Wang, S. Mondal, P. Kezer, M. Hu, J. Liu, Y. Wu, P. Zhou, T. Ma, P. Wang, D. Wang, J.T. Heron, Z. Mi, Applied Surface Science, 637, 157893, 2023