FEI Helios 650 nanolab SEM/FIB

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Specifications

Accelerating Voltage

• Electrons: Landing energy 50V to 30 kV
• Ions: 0.5 kV to 30 kV

Beam Current

• Electrons: 0.8 pA – 26 nA
• Ions: 0.1 pA – 65 nA

Electron Filament

• Schottky Field Emitter

Detectors

• Secondary Electron Imaging – Everhart-Thornley Detector (ETD)
• Secondary Electron Imaging – Through-the-lens Detector (TLD)
• Backscattered Electron Imaging – Concentric Backscatter Deetector (CBS)
• Scanning Transmission Imaging – STEM Detector (STEM)
• Ion Imaging – ICE Detector (ICE)
• NavCam – CCD Camera for sample navigation
• In chamber viewing via CCD TV camera
• EBSD – EDAX Hikari 450 pattern per second capable OIM Camera
• X-ray – EDAX Apollo XL 30mm² UTW silicon drift detector

SEM Resolution

• 0.8 nm @ 15 kV (TLD-SE)
• 0.9 nm @ 1 kV (TLD-SE)

Ion Resolution

• 4.0 nm at 30 kV using preferred statistical method
• 2.5 nm at 30 kV using selective edge method

Gas Injectors

• Platinum
• Insulator Deposition

Micromanipulator

• Omniprobe Autoprobe 200

Included Software

• AutoFIB, AutoTEM, 3DEDS, EBS3, Slice and View